中文
Published date:2014-03-14    Provided by:光电所
  Personal Information
Name: Zhang Xiqing
Sex:  Man
Tel: 010-51688413
E-mail:  xqzhang@center.njtu.edu.cn
Present Address:  Room 7211
Post Card:  100044
  Education
      Professor X. Q. Zhang earned his PhD (1995) degree at Changchun Institute of Physics, Chinese Academy of Sciences. He joined Beijing Jiaotong University in 1997.
  Research Interest
       Professor Zhang’s main research interests include molecular beam epitaxial (MBE) growth and characterization of II-VI compound band-gap semiconductor, nanoscaled semiconductor heterostructures; Visible and UV optoelectronic devices; Nanostructured materials, nonlinear optics, optical spectroscopy; Organic light emitting diode (OLED) and inorganic Electroluminescence(EL).
  Funding
    
  Major Publication
 •      1. X. Q. Zhang, Z. G. Yao, and S. H. Huang, Intrinsic exciton transitions in high-quality ZnO thin films grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates, J. Appl. Phys. 99 (2006) 063709
         2. X.Q. Zhang Ikuo Suemune, H. Kumano, Z.G. Yao, S.H. Huang, Room temperature ultraviolet lasing action in high-quality ZnO thin films, J. Lumin.,122–123 (2007) 828
        3. Z.G. Yao, X.Q. Zhang, Ikuo. Suemune, S.H. Huang, Room-temperature stimulated emission from ZnO thin films grown by radio-frequency magnetron sputtering, J. Lumin.,122–123 (2007) 825
          4. Peng Du, Xiqing Zhang, Xuebai Sun, and Yongsheng Wangn-type ZnS used as electron transport material in organic light-emitting diodes,Chin. Phys. 15(2006)1370
         5. Yao Zhi-Gang, Zhang Xi-Qing, Shang Hong-Kai et al, Lasing action of ZnO thin film grown by radio-frequency magnetron sputtering, Chin. Phys., 14(2005)1205
          6. D.D. Wang, Y.S. Wang, X.Q. Zhang, Z.Q. He, L.X. Yi, L.E. Deng, C.X. Zhang, X. Han, Enlargement of complete two-dimensional band gap by using photonic crystal heterostructure,Appl. Phys. B, 340(2005)1882
          7. W.Q. Peng, S.C. Qu, G.W. Cong, X.Q. Zhang, Z.G. Wang, Optical and magnetic properties of ZnS nanoparticles doped with Mn2+, J.Crystal Growth 282 (2005) 179–185
          8. D. P. XiongX. Q. Zhang et al, Optical properties of ZnO thin films deposited by rf sputtering on SiO2 substractes. Chin Opt. Lett 2 (2004)179
         9. X. Q. Zhang, Ikuo Suemune et al, Surface-emitting stimulated emission in high-quality ZnO thin films, J. Appl. Phys., 96(2004) 3733
        10. X. Q. Zhang, ZK Tang et al, Second harmonic generation in self-assembled ZnO microcrystallite thin films, Thin Solid Films 250 (2004)320
          11. X. Q. Zhang, Z. K. Tang, A. Ohtomo, and H. Koinuma,Optical gain in second harmonic generation in self assembled ZnO microcrystannite thin films J. Crystal Growth 259(2003) 286.
          12. X. Q. Zhang, Z. K. Tang et al, Resonant exciton Second harmonic generation in self assembled ZnO microcrystannite thin films J. Phys.: Condens. Matter 15(2003) 5191
         13. X. Q. Zhang, S. Ganapathy, I. Suemune et al, Improvement of InAs quantum-dot optical properties by strain compensation with GaNAs capping layers, Appl. Phys. Lett.83(2003) 4524.
        14. Sasikala Ganapathy, X. Q. Zhang, Ikuo Suemune et al, GaNAs as Strain Compensating Layer for 1.55mm Light Emission from InAs Quantum Dots, Jpn. J. Appl. Phys.42 (2003) 5598.
         15. X. Q. Zhang, Sasikala Ganapathy, Ikuo Suemune et al, Photoluminescence study of InAs quantum dots embedded in GaNAs strain compensating layer grown by metalorganic-molecular-beam epitaxy, J. Appl. Phys. 92(2002) 6813.

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